The metal contact area heavily doped SiO₂/SiN, surface passivation
The positive and negative metal contact areas on the back of U-IBC 1.0 are heavily doped by diffu- sion, which effectively reduces metal area recombination and improves cell conversion efficiency: It uses lightly doped n+ front surface field (FSF) and silicon oxide/silicon nitride stack. Field passivation and chemical passivation are performed on the front surface by using a layer of film to reduce recom- bination and improve cell conversion efficiency.
U-IBC 1.0
U-IBC is lamenated with flat soldering ribbon
The unique U-IBC two-dimensional encapsulation technology, decrease stress in the encapsulation- process, reduce the possibility of micro cracks in the production, transportation amd installation processes. This innovation also decelerates the power degradation of the module.
Euronergy is a pioneering European PV company at the forefront of advanced back-contact solar cell and module technology...
English
